?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com FGPF50N33BT rev. c0 FGPF50N33BT 330 v pdp trench igbt april 2013 absolute maximum ratings symbol description ratings unit v ces collector to emitter voltage 330 v v ges gate to emitter voltage ? 30 v i c collector current @ t c = 25 o c 50 a i cpulse (1)* pulsed collector current @ t c = 25 o c 120 a i cpulse (2)* pulsed collector current @ t c = 25 o c 160 a p d maximum power dissipation @ t c = 25 o c 43 w maximum power dissipation @ t c = 100 o c 17.2 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering ? purposes, 1/8? from case for 5 seconds 300 o c thermal characteristics symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 2.9 o c/w r ? ja thermal resistance, junction to ambient - 62.5 o c/w notes: 1: repetitive test , pulse width=100usec , duty=0.1 2: half sine wave, d < 0.01, pluse width < 10usec *ic_pluse limited by max tj FGPF50N33BT 330 v pdp trench igbt features ? high current capability ? low saturation voltage: v ce(sat) =1.6 v @ i c = 50 a ? high input impedance ?rohs compliant applications to-220f g e c ?pdp tv general description using novel trench igbt technology, fairchild ? 's new series of trench igbts offer the optimum performance for pdp tv appli - cations where low conduction and switching losses are essen - tial.
FGPF50N33BT 330 v pdp trench igbt ?2008 fairchild semiconductor corporation 2 www.fairchildsemi.com FGPF50N33BT rev. c0 package marking and ordering information device marking device package eco status packaging ty pe qty per tube FGPF50N33BT FGPF50N33BTtu to-220f rohs tube 50ea for fairchild?s definition of ?g r een? eco status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html . electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit ? off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a, tc= 25 o c 330 - - v v ge = 0v, i c = 250 ? a, tc= 125 o c 340 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ? a - 0.2 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v, tc= 25 o c - - 20 ? a v ce = v ces , v ge = 0v, tc= 125 o c - - 200 ? a i ges g-e leakage current v ge = v ges , v ce = 0v - - 200 na ? on characteristics v ge(th) g-e threshold voltage i c = 250 ? a, v ce = v ge 2.3 3.3 4.3 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v, - 1.2 1.5 v i c = 30a , v ge = 15v, - 1.3 - v i c = 50a , v ge = 15v, t c = 25 o c - 1.6 - v i c = 50a , v ge = 15v, t c = 1 25 o c - 1.7 - v ? dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 980 - pf c oes output capacitance - 70 - pf c res reverse transfer capacitance - 40 - pf ? switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 5 ? , v ge = 15v, resistive load, t c = 25 o c - 9 - ns t r rise time - 33 - ns t d(off) turn-off delay time - 32 - ns t f fall time - 202 - ns t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 5 ? , v ge = 15v, resistive load, t c = 125 o c - 9 - ns t r rise time - 37 - ns t d(off) turn-off delay time - 33 - ns t f fall time - 332 - ns q g total gate charge v ce = 200v, i c = 20a, v ge = 15v - 35 - nc q ge gate to emitter charge - 6 - nc q gc gate to collector charge - 14 - nc
FGPF50N33BT 330 v pdp trench igbt ?2008 fairchild semiconductor corporation 3 www.fairchildsemi.com FGPF50N33BT rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge te mperature at variant current level 0.0 1.5 3.0 4.5 6.0 0 40 80 120 160 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.5 3.0 4.5 6.0 0 40 80 120 160 20v t c = 125 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 012345 0 40 80 120 160 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 03691215 0 40 80 120 160 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0 4 8 121620 0 4 8 12 16 20 i c = 20a 30a 50a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 25 50 75 100 125 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50a 30a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] case temperature, t c [ o c]
FGPF50N33BT 330 v pdp trench igbt ?2008 fairchild semiconductor corporation 4 www.fairchildsemi.com FGPF50N33BT rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. 0 4 8 121620 0 4 8 12 16 20 i c = 20a 30a 50a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 110 0 500 1000 1500 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 010203040 0 3 6 9 12 15 common emitter t c = 25 o c 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 400 0.01 0.1 1 10 100 500 single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature dc 10 p s 100 p s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 1 10 100 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ : ] 0 1020304050 10 100 1000 4000 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ : ] gate resistance gate resistance
FGPF50N33BT 330 v pdp trench igbt ?2008 fairchild semiconductor corporation 5 www.fairchildsemi.com FGPF50N33BT rev. c0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching soa characteristics 10 20 30 40 50 10 100 1000 5000 common emitter v ge = 15v, r g = 5 : t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 10 20 30 40 50 5 10 100 200 common emitter v ge = 15v, r g = 5 : t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 0 1020304050 10 100 1000 5000 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ : ] 10 20 30 40 50 1 10 100 1000 10000 20000 common emitter v ge = 15v, r g = 5 : t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a] 110100500 1 10 100 200 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v]
FGPF50N33BT 330 v pdp trench igbt ?2008 fairchild semiconductor corporation 6 www.fairchildsemi.com FGPF50N33BT rev. c0 typical performance characteristics figure 18.transient thermal impedanc e of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.3 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGPF50N33BT 330 v pdp trench igbt ?2008 fairchild semiconductor corporation 7 www.fairchildsemi.com FGPF50N33BT rev. c0 dimensions in millimeters package dimensions dimensions in millimeters to-220f (retractable) * front/back side isolation voltage : ac 2700v
FGPF50N33BT 330 v pdp trench igbt ?2008 fairchild semiconductor corporation 8 www.fairchildsemi.com FGPF50N33BT rev. c0 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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